Damage Caused by RF Oxygen Plasma Asher

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概要

• 論文の詳細を見る

• A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.

• 社団法人応用物理学会の論文
• 1989-08-20

著者

• Samukawa Seiji

  Consumer Lsi Div. Nec Corporation

関連論文

• Damage Caused by RF Oxygen Plasma Asher
• Damage Caused by Stored Charge during ECR Plasma Etching

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