Damage Caused by Stored Charge during ECR Plasma Etching

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概要

• 論文の詳細を見る

• The influence of stored charge caused by changing the plasma parameter can be accurately shown by measuring the leakage current in CMOS-inverter integrated circuits. The leakage current increase is due to nonuniform ion current density distribution and self-bias voltage at the point of ECR plasma discharge turn-off. Positive charge ions are stored by the ion current density difference on a wafer. Moreover, a large voltage across the gate oxide is generated by the self-bias voltage at the point of ECR plasma discharge turn-off, and finally degrades the gate oxide.

• 社団法人応用物理学会の論文
• 1990-05-20

著者

• Samukawa Seiji

  Consumer Lsi Div. Nec Corporation

• Samukawa Seiji

  Consumer Lsi Div. Nec Corporation:(present Address)vlsi Development Division Nec Corporation

関連論文

• Damage Caused by RF Oxygen Plasma Asher
• Damage Caused by Stored Charge during ECR Plasma Etching

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