Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures
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概要
- 論文の詳細を見る
We present the first report of the interface state density distribution in undoped hydrogenated amorphous silicon / crystalline silicon heterostructures. The observed MIS (metal-insulator-semiconductor) like high frequency C(V) variation in this structure is used to obtain interface state density distribution in heterostructures with a-Si:H layer prepared either by reactive sputtering or glow discharge technique.
- 社団法人応用物理学会の論文
- 1989-05-20
著者
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Iyer Suman
Department Of Physics Indian Institute Of Science
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KUMAR Vikram
Department of Physics, Indian Institute of Science
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HARSHAVARDHAN K.
Materials Research Centre, Indian Institute of Science
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Kumar Vikram
Department Of Physics Indian Institute Of Science
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Harshavardhan K.
Materials Research Centre Indian Institute Of Science
関連論文
- Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures
- Anomalous Dopant Redistribution in Nd:YAG Laser Annealed Low Energy Ion Implanted Silicon