Anomalous Dopant Redistribution in Nd:YAG Laser Annealed Low Energy Ion Implanted Silicon

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概要

• 論文の詳細を見る

• CW Nd:YAG laser (1.065 μm wavelength) anneal of B^<11> and BF_2 implanted silicon yields sheet resistance values matching those of the thermally annealed ones. The samples annealed at low laser powers show a narrowing of the secondary ion mass spectroscopy (SIMS) dopant profile compared to the as implanted cases, accompanied by a shift in the profile peak towards the bulk. The anomalous dopant redistribution when annealing is done at low laser powers is explained on the basis of a new phenomenon, termed damage enhanced diffusion.

• 社団法人応用物理学会の論文
• 1992-05-15

著者

• Prabhakar Anantharamaiah

  Mc Division Indian Telephone Industries Ltd.

• KUMAR Vikram

  Department of Physics, Indian Institute of Science

• HARISH Chinnaswamy

  MC Division, Indian Telephone Industries Ltd.

• Kumar V

  Government Of India Kerala Ind

• Kumar Vikram

  Department Of Physics Indian Institute Of Science

• Harish Chinnaswamy

  Mc Division Indian Telephone Industries Ltd.

関連論文

• Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures
• Anomalous Dopant Redistribution in Nd:YAG Laser Annealed Low Energy Ion Implanted Silicon

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