A New Method for Obtaining A Clean SiO_2-Si Interface Using NH_3-O_2 Oxidation

概要

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The growth rate of SiO_2 on a Si wafer obtained in an atmosphere of NH_3 added to dry O_2 was found to lie between the rates obtained with dry O_2 and with steam oxidation. Although the as-grown SiO_2-Si interface had characteristic instabilities, hydrogen annealing at 430℃ yielded a CV curve with a deviation less than 50 mV from the ideal calculated one. The clean interface properties were also confirmed by observing the drain characteristics of MOS transistors with not only a thin channel oxide but also a thick field oxide.
社団法人応用物理学会の論文
1989-02-20