Experimental Study of NH_3-O_2 Oxidation of Si Wafers

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概要

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• The oxidation of an Si wafer in dry O_2 with a few percent of NH_3 added was shown to be a way of obtaining a clean Si-SiO_2 interface. The SiO_2 thickness grown on an Si wafer was obtained as a function of oxidation time, oxidation temperature and NH_3 content in O_2. The H_2O produced in the oxidation of NH_3 in excess O_2 ambient enhanced the oxidation rate, which, however, did not exceed that for 100% steam (H_2O).

• 社団法人応用物理学会の論文
• 1991-02-01

著者

• Shono Katsufusa

  Faculty Of Science And Technology Sophia University

• Tseng Y‐c

  Faculty Of Science And Technology Sophia University

• Tseng Yen-Chuan

  Faculty of Science and Technology, Sophia University

• Tseng Yen-chuan

  Faculty Of Science And Technology Sophia University

関連論文

• Chaotic Behavior in Simple Looped MOS Inverters
• Experimental Study of NH_3-O_2 Oxidation of Si Wafers
• A New Method for Obtaining A Clean SiO_2-Si Interface Using NH_3-O_2 Oxidation

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