MOCVD Growth and PL-Characteristics of Nd Doped GaAs (SOLID STATE DEVICES AND MATERIALS 1)

スポンサーリンク

概要

• 論文の詳細を見る

• Nd-doped GaAs epitaxial layers are grown by low-pressure metalorganic chemical vapour deposition. Nd doping as high as 10^<19> cm^<-3> is achieved at a source temperature of 100℃ using an organic rare-earth source, (CH_3C_5H_4)_3Nd. Nd concentrations in GaAs can be controlled by source temperature in the range from 10^<17> to 10^<19> cm^<-3>. Photoluminescence due to intra-4f-shell transitions in Nd^<3+> ions is observed around 0.9 eV, 1.1 eV, 1.4 eV. The spectra are nearly independent of Nd concentration and show maximum intensity at 8 × 10^<18> cm^<-3>. However, the spectra slightly depend on the growth temperature, reflecting the change in relative density of Nd^<3+> emitting centers with different surrounding atomic configurations.

• 社団法人応用物理学会の論文
• 1989-11-20

著者

• Takahei Kenichiro

  Ntt Basic Research Laboratories

• NAKAGOME Hiroshi

  NTT Basic Research Laboratories

関連論文

• Efficient Er Luminescence Centers Formed in GaAs by Metalorganic Chemical Vapor Deposition with Oxygen Codoping
• MOCVD Growth and PL-Characteristics of Nd Doped GaAs (SOLID STATE DEVICES AND MATERIALS 1)
• Observation of Luminescence from a Highly Concentrated Nd Center in GaP by Direct Optical Excitation and Comparison with Nd Centers Excited Under Host Excitation

スポンサーリンク