Efficient Er Luminescence Centers Formed in GaAs by Metalorganic Chemical Vapor Deposition with Oxygen Codoping

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概要

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• Er-doped GaAs is grown by low-pressure metalorganic chemical vapor deposition with and without oxygen codoping. Optically efficient Er-oxygen complex centers are formed when a small amount of oxygen is present in the growth atmosphere. In situ monitoring of the surface morphology by light scattering from the growing surface with and without oxygen codoping suggests that migration of Er atoms on the surface is pinned by the formation of an Er-oxygen complex. We speculate that this effect suppresses the formation of Er-rich clusters and allows the formation of a high concentration of uniformly dispersed Er-oxygen complex centers that have a high luminescence efficiency.

• 社団法人応用物理学会の論文
• 1994-01-30

著者

• TAGUCHI Akihito

  NTT Basic Research Laboratories

• Takahei Kenichiro

  Ntt Basic Research Laboratories

• Taguchi A

  Ntt Basic Res. Lab. Kanagawa Jpn

関連論文

• Stable Microstructures on a GaAs(111)A Surface : the Smallest Unit for Epitaxial Growth
• Efficient Er Luminescence Centers Formed in GaAs by Metalorganic Chemical Vapor Deposition with Oxygen Codoping
• MOCVD Growth and PL-Characteristics of Nd Doped GaAs (SOLID STATE DEVICES AND MATERIALS 1)
• Observation of Luminescence from a Highly Concentrated Nd Center in GaP by Direct Optical Excitation and Comparison with Nd Centers Excited Under Host Excitation

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