Synchrotron Radiation-Assisted Etching of Silicon Surface

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概要

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• The photo-assisted etching of heavily phosphorous-doped polycrystalline silicon by chlorine was studied using synchrotron radiation as an extreme ultraviolet (EUV) light source. The quantum yield for the removal of the Si atoms at a chlorine pressure of 0.3 Torr was found to be about 0.5% photon^<-1> using the Ti-filtered light, which is mostly in the EUV region, 1-20 nm. Formation of electronically excited Cl^+ ions upon EUV irradiation was confirmed by emission spectroscopy. Negative bias applied to the Si crystal was found to increase the etch rate.

• 社団法人応用物理学会の論文
• 1987-07-20

著者

• HIRAYA Atsunari

  Institute for Molecular Science

• Hayasaka Nobuo

  Institute For Molecular Science:vlsi Research Center Toshiba Corporation

• Shobatake K

  Department Of Molecular Design And Engineering Graduate School Of Engineering Nagoya University

• SHOBATAKE Kosuke

  Institute for Molecular Science

関連論文

• High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
• K-Absorption Spectrum of Solid Neon
• Synchrotron Radiation-Assisted Etching of Silicon Surface

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