Light Point Defects on Hydrogen Annealed Silicon Wafer

概要

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In observing 0.1μm in size light point defects (LPDs) in Czochralski-grown silicon wafers in hydrogen annealing by scatterometer (Surfscan^<【○!R】> SP1 and Surfscan 6200 from Tencor Instrument), we have found that the hydrogen annealed wafer has fewer defects on the surface, compared with a polished wafer. Assuming that LPDs are equal to Crystal Originated Particles (COPs) which are oxygen precipitates and/or vacancy-type defects, LPDs can therefore be reduced by evaporating oxygen from the surface, and migrating silicon-atoms onto the surface during hydrogen annealing at 1200℃ for 1 h.
社団法人応用物理学会の論文
1997-09-15