Preparation of Phosphorus-Doped Microerystalline Silicon by Mercury-Sensitized Photochemical Vapor Deposition Process

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概要

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• Phosphorus-doped microcrystalline silicon (μc-Si) films were prepared on intrinsic hydrogenated amorphous silicon (a-Si:H) by mercury photosensitized decomposition of silane-phosphine-hydrogen gas mixture. We have obtained a high deposition rate of 15 nm/min and a high dark conductivity of 1.2 (Ω・cm)^-1 at the substrate temperature of 240℃. The photothermal deflection spectroscopy (PDS) measurement of n-type μc-Si film ona-Si:H showed that the μc-Si/a-Si:H interface state density made by photo-CVD was small compared with that of the same structure made by the conventional plasma enhanced CVD (PECVD) method.

• 社団法人応用物理学会の論文
• 1997-06-15

著者

• Kawakyu Yoshito

  Materials And Devices Research Laboratories Toshiba Corporation

• Hiramatsu Masato

  Materials And Devices Research Laboratories Toshiba Corporation

関連論文

• Mercury-Sensitized Hydrogen Radical Photoetching of Hydrogenated Amorphous Silicon
• Preparation of Phosphorus-Doped Microerystalline Silicon by Mercury-Sensitized Photochemical Vapor Deposition Process

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