Mercury-Sensitized Hydrogen Radical Photoetching of Hydrogenated Amorphous Silicon

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概要

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• A study of the etching of hydrogenated amorphous silicon films has been carried out by using hydrogen radical produced by mercury-photosensitization of hydrogen gas. There was found it be an incubation period before etching began, and the incubation period depended on surface pretreatment conditions. It can be explained that the variation in incubation period strongly depend on unevenness of the a-Si:H surface. It has also been found that the actual etching rate of undoped a-Si:H increases with decreasing the substrate temperature. The authors consider that surface reaction, that is, adsorption of hydrogen radical, is dominant in this etching process.

• 社団法人応用物理学会の論文
• 1996-12-01

著者

• Kawakyu Yoshito

  Materials And Devices Research Laboratories Toshiba Corporation

• Hiramatsu Masato

  Materials And Devices Research Laboratories Toshiba Corporation

関連論文

• Mercury-Sensitized Hydrogen Radical Photoetching of Hydrogenated Amorphous Silicon
• Preparation of Phosphorus-Doped Microerystalline Silicon by Mercury-Sensitized Photochemical Vapor Deposition Process

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