(110) Substrates for ZnSe on GaAs Heteroepitaxy

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概要

• 論文の詳細を見る

• In this letter we present definitive evidence that the ZnSe epitaxial layer grows far better on GaAs(110)than on conventional GaAs(100) substrates. This evidence was derived from channeling measurements of 2 MeVHe ions along major crystalline directions; the ZnSe on GaAs(1OO) system exhibited a large interface disorderpeak in channeling backscattering spectra, whereas the ZnSe on GaAs(110) system gave smooth and featureless spectra. We deduce the quantitative interface disorder from the result of the measurements, and discuss a possible correlation between the interface structure and the charge neutralization problem of this heteroepitaxial system.

• 社団法人応用物理学会の論文
• 1997-01-15

著者

• Narusawa Tadashi

  Matsushita Research Institute Tokyo

• Nishiyama Fumitaka

  Department Of Applied Physics And Chemistry Hiroshima University

• Yao Takahumi

  Institute For Materials Research Tohoku University

• Zhu Ziqiang

  Institute For Materials Research Tohoku University

関連論文

• Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
• Evaluation of Epitaxial ZnTe Films Prepared by RF Sputtering by Means of Ion Beam Channeling
• Ion Beam Analysis of ZnSe
• Role of L-Histidine in Conferring Tolerance to Ni^ in Sacchromyces cerevisiae Cells
• (110) Substrates for ZnSe on GaAs Heteroepitaxy

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