High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH_3 on Surface Cracking
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-15
著者
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Karczewski G
Institute Of Physics Polish Academy Of Sciences
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Karczewski Grzegorz
Institute Of Physics Polish Academy Of Sciences Al.
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Karczewski Grzegorz
Institute Of Physics Polish Academy Of Sciences
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KAMP Markus
Department of Optoelectronics, University of Ulm
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MAYER Markus
Department of Optoelectronics, University of Ulm
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PELZMANN Arthur
Departrtnent of Optoelectronics, University of Ulm
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EBELING Karl
Departrtnent of Optoelectronics, University of Ulm
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TEISSEYRE Henryk
High Pressure Research Center, Polish Academy of Sciences, ul.
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NOWAK Grzegorz
High Pressure Research Center, Polish Academy of Sciences, ul.
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LESZCZYNSKI Mike
High Pressure Research Center, Polish Academy of Sciences, ul.
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GRZEGORY Izabella
High Pressure Research Center, Polish Academy of Sciences, ul.
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POROWSKI Sylvester
High Pressure Research Center, Polish Academy of Sciences, ul.
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Porowski Sylvester
High Pressure Research Center Polish Academy Of Sciences Ul.
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Kamp Markus
Departrtnent Of Optoelectronics University Of Ulm
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Mayer Markus
Department Of Optoelectronics University Of Ulm
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Ebeling Karl
Departrtnent Of Optoelectronics University Of Ulm
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Nowak Grzegorz
High Pressure Research Center Polish Academy Of Sciences Ul.
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Pelzmann Arthur
Departrtnent Of Optoelectronics University Of Ulm
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Leszczynski Mike
High Pressure Research Center Polish Academy Of Sciences Ul.
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Grzegory Izabella
High Pressure Research Center Polish Academy Of Sciences Ul.
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Teisseyre Henryk
High Pressure Research Center Polish Academy Of Sciences Ul.
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- High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH_3 on Surface Cracking
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