Low-Temperature Growth of ZnS by Photoassisted Metalorganic Chemical Vapor Deposition

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概要

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• Low-temperature growth of ZnS on quartz and GaAs substrates has been carried out by photoassisted metalorganic chemical vapor deposition (MOCVD) using an ArF excimer laser. Hydrocarbon incorporation in the films, however, makes it difficult to perform crystal growth at temperatures of less than 400℃. This hydrocarbon incorporation was prevented by decomposition of metalorganics on the substrate by simultaneous irradiation of an ultrahigh-pressure mercury lamp on the substrate surface. Using this technique, crystal growth of ZnS was achieved at growth temperatures in the range of 100-150℃.

• 社団法人応用物理学会の論文
• 1996-07-15

著者

• FUJITA Yasuhisa

  Advanced Technology Research Laboratories, Nippon Steel Corporation

• Fujita Yasuhisa

  Advanced Technology Research Laboratories Nippon Steel Corporation

• Fujita Yasuhisa

  Advanced Semiconductor Materials And Devices Laboratories Nippon Steel Corporation

関連論文

• Growth of Nitrogen-Doped ZnSe by Photoassisted Metalorganic Chemical Vapor Deposition
• Photoluminescence Spectra of Nitrogen-Doped ZnSe by Photoassisted Metal-Organic Chemical Vapor Deposition
• Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs-Si Interface
• Low-Temperature Growth of ZnS by Photoassisted Metalorganic Chemical Vapor Deposition

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