Heteroepitaxial Growth of α-Fe_2O_3 Thin Films on (111) GGG

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概要

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• Thin films of α-Fe_2O_3 have been prepared on gadolinium gallium garnet (GGG) (111) substrates by rf sputtering and subsequent heat treatment. The films deposited below 180℃ and annealed at 900℃ were found to exhibit a strong [0006] texture perpendicular to the film plane. X-ray pole figure analysis showed that a nearly single-crystalline film of (0001) α-Fe_2O_3 was grown on (111) GGG with an in-plane alignment of α-Fe_2O_3 [2110] parallel to GGG [110]. Thus, the α-Fe_2O_3 films with the corundum crystal structure may be a promising buffer layer for achieving heteroepitaxy of various ferrite thin films onto a common substrate of GGG.

• 社団法人応用物理学会の論文
• 1996-05-01

著者

• Gomi Manabu

  School Of Materials Science Japan Advanced Institute Of Science And Technology

• Toyoshima Hiroshi

  School Of Materials Science Japan Advanced Institute Of Science And Technology

関連論文

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• Heteroepitaxial Growth of α-Fe_2O_3 Thin Films on (111) GGG
• Photoluminescent and Structural Properties of Precipitated ZnO Fine Particles
• Photoluminescent and Structural Properties of Precipitated ZnO Fine Particles

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