High Performance Fabry-Perot Modulator Using Interdiffused AlGaAs/GaAs Quantum Wells
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概要
- 論文の詳細を見る
Interdiffused AlGaAs/GaAs quantum well structures are being employed as an active cavity material in the Fabry-Perot reflection type modulators. An extremely large relative reflectance change (over 14000) is predicted, higher than any value that has been reported among the available literature today. This is due to an extremely low reflectance (〜10^<-5>) at the resonance of the Fabry-Perot mode while simultaneously the change of reflectance is kept around the order of unity. The power consumption is reduced by 67% due to the highly sensitive electrons in the interdiffused welts. A wide operation wavelength range of over 100 nm is also observed.
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Li E
Univ. Hong Kong Hkg
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Li E.
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Ko
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Choy Wallace
Department Of Electrical And Electronic Engineering University Of Hong Kong
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Li E.
Department Of Electrical And Electronic Engineering University Of Hong Kong
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