Confinement Subbands in an InGaAs/GaAs Non-Square Quantum Well
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概要
- 論文の詳細を見る
Calculations of the confinement subbands energy levels, interband transitions energy and related overlapping wavefunctions in a single In_<0.2>Ga_<0.8>As/GaAs non-square strained quantum well structure have been carried out for an error function confinement profile. The results indicate a squeezing of subband states during the latter stages of diffusion, and an enhancement of the off diagonal transitions overlapping wavefunction, during the mid stages of diffusion, which give rise to a relaxed selection rule.
- 社団法人応用物理学会の論文
- 1992-01-15
著者
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Li E.
Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Ko
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Micallef Joseph
Department Of Electronic And Electrical Engineering University Of Surrey
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Weiss Bernard
Department Of Electronic And Electrical Engineering University Of Surrey
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Li E.
Department Of Electrical And Electronic Engineering University Of Hong Kong
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Li E.
Department Of Electronic And Electrical Engineering University Of Surrey
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