Influence of Grain Boundary Configuration in Aluminum Films on Abrupt Resistance Changes during Electromigration

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概要

• 論文の詳細を見る

• Resistance changes accompanying electromigration were measured in aluminum thin-film interconnections with three different types of grain boundary (GB) configuration. Abrupt and oscillatory changes in resistance were observed and they were related to the number of grain-boundary triple points (GBTPs) in the sample and the connections between them by grain boundaries. This result supports the model that abrupt resistance change occurs when an aggregate of vacancies with considerable size makes a transition to the void at a certain GBTP.

• 社団法人応用物理学会の論文
• 1993-02-15

著者

• Hoh Koichiro

  Faculty Of Engineering Yokohama National University:faculty Of Engineering The University Of Tokyo

• Hong Chao-fu

  Faculty Of Engineering Yokohama National University

• Togo M

  Nec Corp. Kanagawa Jpn

• Togo Mitsuhiro

  Faculty Of Engineering Yokohama National University

関連論文

• Repair of Electromigration-Induced Voids in Aluminum Interconnection by Current Reversal
• Influence of Grain Boundary Configuration in Aluminum Films on Abrupt Resistance Changes during Electromigration

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