DC-Bias-Field-Induced Dielectric Relaxation in Antiferroelectric Phase of TFMHPOBC
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概要
- 論文の詳細を見る
Dielectric properties in TFMHPOBC (4-(1,1,1-trifluoromethyl-heptyloxycarbonyl) phenyl 4'-octyloxybiphenyl-4-carboxylate) have been investigated as functions of temperature and dc bias field. In the antiferroelectric phase under no bias field, relaxation due to the soft mode and molecular rotation around the short axis are observed. Under dc bias field, a new relaxation is observed in chiral smectic C_A (Sm C^*_A). The dielectric strength of this relaxation depends on the bias field, while the relaxation frequency is not affected by the dc bias field.
- 社団法人応用物理学会の論文
- 1993-10-01
著者
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MORITAKE Hiroshi
Department of Electrical and Electronic Engineering, National Defense Academy
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Yoshino Katsumi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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MORITAKE Hiroshi
Electrical and Electronic Engineering, National Defense Academy
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Ozaki Masanori
Department Of Electrical Electronic And Informational Engineering Osaka University
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Moritake Hiroshi
Electrical And Electronic Engineering National Defense Academy
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Mizukami Hiroyoshi
Department Of Electronic Engineering Graduate School Of Engineering Osaka University
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