Effects of Heavily Carbon-Doped Base Layers on Performance of Submicron AlGaAs/GaAs Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る

• Submicron heterojunction bipolar transistors (HBTs) with maximum frequency of oscillation, f_<MAX>, of 91 GHz have been fabricated using a self-aligned technique and a very heavily carbon-doped (10^<20> cm^<-3>) base layer. Since the quenching of photoluminescence (PL) intensity in heavily-doped Cabs is mainly due to nonradiative recombination in the bulk material, while contribution from surface recombination is negligible, the use of a heavily carbon-doped base layer in AlGaAs/GaAs HBTs minimizes the influence of surface recombination in the extrinsic base region. Thus, for HBTs with a heavily doped base layer, the "emitter size effect" (degradation of HBT current gain) is greatly reduced when the emitter width is scaled down to submicron (0.6 μm) dimensions.

• 社団法人応用物理学会の論文
• 1993-10-01

著者

• Calderon L.

  Ece Department Rutgers University

• YANG L.

  Ford Microelectronics, Inc.

• WRIGHT P.

  Martin Kestrel Co., Inc.

• SHEN H.

  U.S. Army Electronics Technology and Device Laboratory

• LU Y.

  ECE Department, Rutgers University

• BRUSENBACK P.

  Ford Microelectronics, Inc.

• KO S.

  Ford Microelectronics, Inc.

• HARTZLER W.

  Ford Microelectronics, Inc.

• HAN W.

  ECE Department, Rutgers University

• DUTTA M.

  U.S. Army Electronics Technology and Device Laboratory

• CHANG W.

  U.S. Army Electronics Technology and Device Laboratory

• Brusenback P.

  Ford Microelectronics Inc.:(present) Bandgap Technology Corp.

• Wright P.

  Martin Kestrel Co. Inc.

• Hartzler W.

  Ford Microelectronics Inc.

関連論文

• Effects of Heavily Carbon-Doped Base Layers on Performance of Submicron AlGaAs/GaAs Heterojunction Bipolar Transistors

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