YANG L. | Ford Microelectronics, Inc.

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概要

• 同名の論文著者
• Ford Microelectronics, Inc.の論文著者

関連著者

• Calderon L.

  Ece Department Rutgers University

• YANG L.

  Ford Microelectronics, Inc.

• WRIGHT P.

  Martin Kestrel Co., Inc.

• SHEN H.

  U.S. Army Electronics Technology and Device Laboratory

• LU Y.

  ECE Department, Rutgers University

• BRUSENBACK P.

  Ford Microelectronics, Inc.

• KO S.

  Ford Microelectronics, Inc.

• HARTZLER W.

  Ford Microelectronics, Inc.

• HAN W.

  ECE Department, Rutgers University

• DUTTA M.

  U.S. Army Electronics Technology and Device Laboratory

• CHANG W.

  U.S. Army Electronics Technology and Device Laboratory

• Brusenback P.

  Ford Microelectronics Inc.:(present) Bandgap Technology Corp.

• Wright P.

  Martin Kestrel Co. Inc.

• Hartzler W.

  Ford Microelectronics Inc.

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著作論文

• Effects of Heavily Carbon-Doped Base Layers on Performance of Submicron AlGaAs/GaAs Heterojunction Bipolar Transistors

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