Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers

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概要

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• Radial distributions of temperature profiles in the active layer of etched-well vertical-cavity surface-emitting lasers are determined using a new comprehensive two-dimensional thermal model featuring realistic distribution of heat sources. Self-consistency between electrical and thermal processes is achieved. Importance of two-dimensional current- and heat-spreading is demonstrated.

• 社団法人応用物理学会の論文
• 1991-04-01

著者

• Osinski Marek

  Center For High Technology Materials University Of New Mexico:department Of Electrical And Computer

• Nakwaski Wlodzimierz

  Center for High Technology Materials, University of New Mexico

• Nakwaski Wlodzimierz

  Center For High Technology Materials University Of New Mexico:the Institute Of Physics Technical Uni

関連論文

• Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers
• Multimode Small-Signal Analysis of Side-Mode Injection-Locked Semiconductor Lasers

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