Multimode Small-Signal Analysis of Side-Mode Injection-Locked Semiconductor Lasers
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概要
- 論文の詳細を見る
Temporal response of side-mode injection-locked semiconductor lasers is studied using a small signal analysis of multimode rate equations. The relaxation oscillation frequency and the decay rate are shown to be sensitive to the choice of the injection target mode. Modes with shorter wavelengths have higher relaxation frequencies due to their larger differential gain. Maximum enhancement of the relaxation frequency occurs within that group of target modes. The analysis, together with the previously predicted enhancement of stable locking range, suggests feasibility of applying the side-mode injection technique to increase the modulation bandwidth of semiconductor lasers and hence the transmission speed in optical communication systems, while preserving the usual benefits of injection locking.
- 社団法人応用物理学会の論文
- 1992-06-01
著者
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Luo Jhy-ming
Center For High Technology Materials University Of New Mexico:(present Address) American Optical Cor
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Osinski M
Center For High Technology Materials University Of New Mexico:department Of Electrical And Computer
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Osinski Marek
Center For High Technology Materials University Of New Mexico:department Of Electrical And Computer
関連論文
- Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers
- Multimode Small-Signal Analysis of Side-Mode Injection-Locked Semiconductor Lasers