Stress-Induced Contact Failures in Al-Si/n-Si Structures

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概要

• 論文の詳細を見る

• Al-Si/n-Si contacts passivated with P-SiN films were electrically opened during an accelerating life test at 150℃, while contacts passivated with PSG films or P-SiO films were not. The failure rate increased as the size of contacts decreased and also as the tensile stress in Al-Si interconnections increased. The open failures at contacts were attributable to Si precipitation at contacts from Al-Si in the course of stress relaxation in the interconnections.

• 社団法人応用物理学会の論文
• 1990-05-20

著者

• Ueda Seiji

  Kyoto Research Laboratory Matsushita Electronics Corporation

• MAYUMI Shuichi

  Kyoto Research Laboratory, Matsushita Electronics Corporation

• Mayumi Shuichi

  Kyoto Research Laboratory Matsushita Electronics Corporation

• SHISHINO Masahumi

  Kyoto Research Laboratory, Matsushita Electronics Corporation

• Shishino Masahumi

  Kyoto Research Laboratory Matsushita Electronics Corporation

関連論文

• Etch-Back Planarization Technique for Multilevel Metallization
• Contact Failures due to Polymer Films Formed during Via-Hole Etching
• PSG Flow in High-Pressure Steam
• Stress-Induced Contact Failures in Al-Si/n-Si Structures

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