Comparison of Silica- and Alumina-Based Spin-on Sources for P-Contact Diffusion of Zinc into InGaAs

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概要

• 論文の詳細を見る

• Alumina- and silica- based spin-on sources for p^+-doping of InGaAS contact layers are compared. Shallow diffusion profiles with hole concentrations up to 2×10^<20>/cm^3 were obtained. Higher doping levels and improved long-term stability of the spin-on solution were achieved with the alumina-based source.

• 社団法人応用物理学会の論文
• 1990-05-20

著者

• Weber R

  Ifrf

• FRANZ G.

  Siemens AG Research Laboratories

• AMANN M.-C.

  Siemens AG Research Laboratories

• THULKE W.

  Siemens AG Research Laboratories

• WEBER R.

  Heinrich-Hertz-Institut

• KAUMANNS R.

  Heinrich-Hertz-Institut

• Thulke W

  Siemens Ag Muenchen Deu

• Amann M‐c

  Technische Univ. Muenchen Garching Deu

関連論文

• IFRF(International Flame Research Foundation)における最近の研究(2)工業規模火炎の数学モデル
• Comparison of Silica- and Alumina-Based Spin-on Sources for P-Contact Diffusion of Zinc into InGaAs
• Narrow-Linewidth InGaAsP/InP Metal-Clad Ridge-Waveguide Distributed Feedback Lasers
• Segregation of Zinc in InGaAs/InP Heterostructures During Diffusion: Experiment and Numerical Modeling

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