Segregation of Zinc in InGaAs/InP Heterostructures During Diffusion: Experiment and Numerical Modeling

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概要

• 論文の詳細を見る

• Zn diffusions from spin-on films were performed into InP/InGaAs/InP heterostructures suited for fabrication of heterojunction bipolar transistors. A strong segregation occurred at the InGaAs/InP heterojunctions enriching the Zn concentration in InGaAs by about an order of magnitude. From the Zn concentration profiles the relevant diffusion and segregation parameters were determined. Using these data an accurate numerical modeling and improved process control of the Zn diffusion into InGaAs/InP multilayer heterostructures can be achieved.

• 社団法人応用物理学会の論文
• 1990-05-20

著者

• AMANN M.-C.

  Siemens AG Research Laboratories

• DILDEY F.

  Siemens AG, Research Laboratories

• TREICHLER R.

  Siemens AG, Research Laboratories

• Treichler R.

  Siemens Ag Research Laboratories

• Dildey F.

  Siemens Ag Research Laboratories

関連論文

• Comparison of Silica- and Alumina-Based Spin-on Sources for P-Contact Diffusion of Zinc into InGaAs
• Narrow-Linewidth InGaAsP/InP Metal-Clad Ridge-Waveguide Distributed Feedback Lasers
• Segregation of Zinc in InGaAs/InP Heterostructures During Diffusion: Experiment and Numerical Modeling

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