Optical Ionization Energy of Shallow Donors in S-Doped Epitaxial GaAs

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概要

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• Far-infrared (FIR) laser experiments together with secondary-ion mass spectrometry (SIMS) analysis are performed to study the shallow donor-ionization energy in n-type GaAs with high donor concentrations. It is shown that the optical ionization energy of shallow donors remains constant for donor concentration N_d as high as 2.0×10^<16>/cm^3 and decreases gradually to zero at N_<d,crit.> 〜1×10^<17>/cm^3. The latter value is larger than that from the Mott criterion for a metal-insulator transition or that of the thermal regime.

• 社団法人応用物理学会の論文
• 1990-05-20

著者

• SAITO Ken

  NTT Basic Research Laboratories

• Yamada Syoji

  Ntt Basic Research Laboratories

関連論文

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• Optically Detected Cyclotron Resonance by Multichannel Spectroscopy
• Fabrication of Quantum Wires by Ga Focused-Ion-Beam Implantation and Their Transport Properties
• Analysis of Donor and Compensation Ratio in I-Doped ZnSe by Far-Infrared Magnetoabsorption
• Optical Ionization Energy of Shallow Donors in S-Doped Epitaxial GaAs

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