Heating Current Induced Conversion between 2×1 and 1×2 Domains at Vicinal (001) Si Surfaces-Can it be Explained by Electromigration of Si Adatoms?

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概要

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• Besides randomly walking on the crystal surface the adatoms are assumed to have a drift velocity c=D_s F/kT, where D_s is the surface diffusion coefficient and F is a force, related in some way to the specimen heating current. In the limiting case of narrow terraces (small interstep distance l ) the major process on the whole surface is the surface transport, which results an absence of noticeable conversion of the domain structure when Fl/kT〓0.1. Making use of the agreement between this conclusion and the experimentally observed [H. Kahata and K. Yagi: Jpn. J. Appl. Phys. 28 (1989) L858] lack of conversion (under reversal of the current direction) at l〓40-80 nm and T=700℃, the force F is estimated to be in the range 10^<-14> -10^<-13> N. Experimental verification of the predicted stability of vicinal surfaces with l<80 nm when F has step-up direction and instability (decay to large terraces, separated by steps of multiple height) when F has step-down direction can be a crucial test of the hypothesis for an electromigration of Si adatoms.

• 社団法人応用物理学会の論文
• 1990-04-20

著者

• Stoyanov S.

  Institut Fur Festkorperforschung Des Forschungszentrums Jiilich:institute Of Physical Chemistry Bulg

関連論文

• 解説 Electromigration of Si Adatoms on Si Surface--A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth (小特集:結晶成長理論の最近の動向)
• Heating Current Induced Conversion between 2×1 and 1×2 Domains at Vicinal (001) Si Surfaces-Can it be Explained by Electromigration of Si Adatoms?

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