解説 Electromigration of Si Adatoms on Si Surface--A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth (小特集:結晶成長理論の最近の動向)

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概要

• 論文の詳細を見る
• 日本結晶成長学会の論文
• 2002-04-10

著者

• Metois J.

  Crmc2-cnrs Campus De Luminy

• Tonchev V.

  Institute Of Physical Chemistry Bulgarian Academy Of Sciences

• Stoyanov S.

  Institut Fur Festkorperforschung Des Forschungszentrums Jiilich:institute Of Physical Chemistry Bulg

• Stoyanov S.

  Institute Of Physical Chemistry Bulgarian Academy Of Sciences

• Metois J.J.

  CRMC2-CNRS, Campus de Luminy

関連論文

• 解説 Electromigration of Si Adatoms on Si Surface--A key to understanding the step bunching instabilities during sublimation, equilibrium and MBE growth (小特集:結晶成長理論の最近の動向)
• Heating Current Induced Conversion between 2×1 and 1×2 Domains at Vicinal (001) Si Surfaces-Can it be Explained by Electromigration of Si Adatoms?

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