Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors

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概要

• 論文の詳細を見る

• To describe the electron transport in both the high and low field region of a semiconductor device more accurately a method to couple Monte Carlo and drift-diffusion model has been developed. The space dependent parameters occurring in the drift-diffusion equation are calculated by means of the Monte Carlo method. Their definitions are derived from the Boltzmann transport equation without restricting assumptions about the underlying band structure. With this method regional Monte Carlo device analysis can be performed. The transport coefficients have to be calculated just in the high field region by the computationally demanding Monte Carlo method, thus including non-local effects such as velocity overshoot and ballistic transport, whereas in the remaining regions the solution of the drift-diffusion current relation with local parameters is sufficient.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Selberherr Siegfried

  Institute For Microelectronics Technical University Vienna

• Selberherr Siegfried

  Institute For Microelectronics

• Kosina Hans

  Institute For Microelectronics Technical University Vienna

関連論文

• Investigation of the Electron Mobility in Strained Si_Ge_x at High Ge Composition(the IEEE International Conference on SISPAD '02)
• An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration(the IEEE International Coference on SISPAD '02)
• Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors

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