An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration(<Special Issue>the IEEE International Coference on SISPAD '02)

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概要

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• For tracking electromigration induced evolution of voids a diffuse interface model is applied. We assume an interconnect as two-dimensional electrically conducting via which contains initially a circular void. The diffuse interface governing equation was solved applying a finite element scheme with a robust local grid adaptation algorithm. Simulations were carried out for voids exposed to high current. An influence of the void dynamics on the resistance of interconnect is investigated. In the case of the interconnect via it was shown that a migrating void exactly follows the current flow, retaining its stability, but due to change of shape and position causes significant fluctuations in interconnect resistance.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Selberherr Siegfried

  Institute For Microelectronics

• CERIC Hajdin

  Institute for Microelectronics

関連論文

• Investigation of the Electron Mobility in Strained Si_Ge_x at High Ge Composition(the IEEE International Conference on SISPAD '02)
• An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration(the IEEE International Coference on SISPAD '02)
• Coupling of Monte Carlo and Drift Diffusion Method with Applications to Metal Oxide Semiconductor Field Effect Transistors

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