Analytical Model for Circuit Simulation with Quarter Micron Metal Oxide Semiconductor Field Effect Transistors : Subthreshold Characteristics

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概要

• 論文の詳細を見る

• For deep submicron MOSFETs short-channel effects dominate the transistor characteristics. This is due to the increase of the lateral electric field. This paper provides a new simple model which includes the gradient of the lateral electric field in an analytical way. The model describes the subthreshold characteristics relating to short-channel effects correctly down to 0.1 μm effective channel length L_<eff> with physical parameters (N_<sub>, C_<ox>, V_<fb>, φ_f) taken from the long-channel device.

• 社団法人応用物理学会の論文
• 1990-12-20

著者

• Miura‐mattausch M

  Siemens Ag Munich Deu

• Miura-mattausch Mitiko

  Siemens Ag Corporate Research And Development

• JACOBS Hermann

  Siemens AG, Corporate Research and Development

• Jacobs Hermann

  Siemens Ag Corporate Research And Development

関連論文

• Analytical Model for Circuit Simulation with Quarter Micron Metal Oxide Semiconductor Field Effect Transistors : Subthreshold Characteristics
• Unified MOSFT Model for All Channel Lengths down to Quarter Micron

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