X-Ray Photoelectron Spectroscopy Studies of Titanium Nitride Barrier Metals Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• Titanium nitride (TiN) films prepared by means of low-pressure metalorganic chemical vapor deposition (LP-MOCVD) with the tetrakis-dimethyl-amino titanium (TDMAT) and ammonia, attempting for producing conformal barrier metals for ultra-large scale integrated devices, are studied by means of X-ray photoelectron spectroscopy (XPS) in conjunction with Ar ion bombardment. In the detailed analysis of XPS spectra of the C 1 s region composed of two peaks corresponding to the chemical bondings of hydrocarbon and Ti-C, it is found that the relative intensity ratio between two peaks can be a direct measure of film properties, and that the chemical bonding of hydrocarbon dominates as the film thickness increases and the deposition temperature decreases.

• 社団法人応用物理学会の論文
• 1995-07-15

著者

• Oh J

  Department Of Electronics Engineering Han Yang University

• Lee S.

  Memory Business Division Sam Sung Electronics

• OH J.

  Department of Environmental Atmospheric Sciences, Pukyong National University

• Oh J.

  Department Of Applied Chemistry The University Of Tokyo

• Choi J.

  Memory Business Division Sam Sung Electronics

• Lee H.

  Memory Business Division Sam Sung Electronics

• CHANG Y.

  Department of Physics, National Central University

• Lee J.

  Memory Business Division Sam Sung Electronics

• WON S.

  Department of Materials Engineering, Han Yang University

• PAEK S.

  Department of Materials Engineering, Han Yang University

• AHN S.

  Memory Business Division, Sam Sung Electronics

• Chang Y

  Industrial Technology Research Inst. Hsinchu Twn

• Paek S.

  Department Of Materials Engineering Han Yang University

• Chang Y.

  Department Of Physics National Central University

• CHANG Y.

  Department of Electronics Engineering, Han Yang University

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