InGaAs-GaAs-InGaP Distributed Bragg Reflector Buried Heterostructure Strained Quantum Well Lasers

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概要

• 論文の詳細を見る

• We report on the first demonstration of InGaAs-GaAs-InGaP distributed Bragg reflector (DBR) buried heterostructure strained quantum well lasers. The devices, entirely grown by three step MOVPE process, show a CW threshold current of 7.2 mA measured at RT and this is, to the best of our knowledge, the lowest CW threshold current ever obtained from GaAs based DBR lasers. The monomode oscillation is obtained with the sidemode suppression ratio of 25 dB, the Bragg wavelength at 0.96 μm, and the temperature sensitivity of DBR modes being 0.53 Å/℃ between 20 and 35℃.

• 1995-07-15

著者

• Horikawa H.

  Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.

• SIN Y.

  Photonic Devices Lab., Semiconductor R & D Laboratories, Hyundai Electronics Industries Co., Ltd.

• Sin Y.

  Photonic Devices Lab. Semiconductor R & D Laboratories Hyundai Electronics Industries Co. Ltd.

関連論文

• InGaAs-GaAs-InGaP Distributed Bragg Reflector Buried Heterostructure Strained Quantum Well Lasers
• Ultralow Laser Threshold Operation of InGaAs-GaAs-InGaP Strained Quantum Well Fabry-Perot and Distributed Feedback Lasers

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