Ultralow Laser Threshold Operation of InGaAs-GaAs-InGaP Strained Quantum Well Fabry-Perot and Distributed Feedback Lasers

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概要

• 論文の詳細を見る

• Data are presented on ultralow threshold current characteristics of InGaAs-GaAs-InGaP buried heterostructure (BH) strained quantum well (QW) lasers suitable for optical interconnects. As-cleaved 350 μm-long Fabry-Perot BH strained QW lasers show an extremely low CW threshold current of 0.6 mA and a high slope efficiency of 0.45 mW/mA per facet. Also, uncoated InGaP distributed feedback (DFB) BH strained QW lasers show an ultralow CW threshold current of 2.2 mA and a sidemode suppression ratio (SMSR) of 30 dB. To the best of our knowledge, this is the lowest threshold current ever obtained from GaAs or InP based DFB lasers.

• 1995-05-01

著者

• Horikawa H.

  Semiconductor Tech. Lab. Oki Electric Industry Co. Ltd.

• SIN Y.

  Photonic Devices Lab., Semiconductor R & D Laboratories, Hyundai Electronics Industries Co., Ltd.

• Sin Y.

  Photonic Devices Lab. Semiconductor R & D Laboratories Hyundai Electronics Industries Co. Ltd.

• Sin Y.

  Photonic Devices Lab. Semiconductor R&d Laboratories Hyundai Electronics Industries Co. Ltd.

関連論文

• InGaAs-GaAs-InGaP Distributed Bragg Reflector Buried Heterostructure Strained Quantum Well Lasers
• Ultralow Laser Threshold Operation of InGaAs-GaAs-InGaP Strained Quantum Well Fabry-Perot and Distributed Feedback Lasers

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