Titanium Nitride Deposition Using Chemical Beams of Metalorganic Precursors and ECR Plasma-Activated Nitrogen

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This letter presents TiN deposition by using chemical beams. In this deposition, nitrogen activated by electron cyclotron resonance, and metalorganic precursors of titanium are supplied onto a substrate as molecular beams in a high vacuum. Dependencies of deposition rate, film composition and resistivity on d.c. bias applied to the substrate show that positive ions are important in deposition and in improving film properties. Moreover, controlling a particular reaction area and the angle of incidence of the molecular beam results in bottom coverage of more than 80% in the contact holes with an aspect ratio of about 3.
社団法人応用物理学会の論文
1995-06-01