Preparation and Properties of CuInS_2 Thin Films Produced by the Reactive Sputtering Method

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概要

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• Nearly stoichiometric CuInS_2 thin films have been prepared on Pyrex slide glass by the reactive sputtering method using CS_2 as a reactive gas at a substrate temperature of 150℃ by controlling the CS_2 partial pressure. Sputtering for 2 hours yields the thickness of 1〜2 μm. The films are preferentially oriented with the (112) plane parallel to the substrate. The forbidden gap is estimated to be 1.51 eV which is slightly smaller than that of the single crystal. For films with fairly good stoichiometry, the conduction is p-type and the resistivity ranges between 10 and 10^4Ω・cm. A fairly large amount of carbon is incorporated during growth.

• 社団法人応用物理学会の論文
• 1995-04-15

著者

• KOBAYASHI Satoshi

  Faculty of Engineering, Niigata University

• Kaneko Futao

  Faculty Of Engineering Niigata University

• Kawakami Takahiro

  Faculty Of Engineering Niigata University

• Kobayashi Satoshi

  Faculty Of Engineering Niigata University

• Yu Dan

  Faculty Of Engineering Niigata University

• SARINANTO Mohammad

  Faculty of Engineering, Niigata University

• KOBAYASHI Yasuyuki

  Faculty of Engineering, Niigata University

• Kobayashi Yasuyuki

  Faculty Of Engineering Niigata University

• Sarinanto Mohammad

  Faculty Of Engineering Niigata University

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