Computer Simulation of Fatigue in Ferroelectric Thin Films by a Modified Diffusion Limited Aggregation Model with Drift
スポンサーリンク
概要
- 論文の詳細を見る
Two-dimensional computer simulation of fatigue in ferroelectric thin films has been carried out by using a modified diffusion limited aggregation model with drift. The simulation shows that the fatigue process follows a power-law at early time regime and speeds up dramatically at later time regime. It has been revealed that both the fatigue endurance value and the average value of fractal dimension of the fatigued units pattern increase as the drift strength increases.
- 社団法人応用物理学会の論文
- 1995-01-01
著者
-
Zhao Jianhong
Department Of Solid State Electronics Huazhong Universirty Of Science And Technology
-
Zhao Jianhong
Department Of Electronic Science And Technology Huazhong University Of Science And Technology
-
LI Xingjiao
Department of Solid State Electronics, Huazhong Universirty of Science and Technology
-
LIU Jianshe
Department of Solid State Electronics, Huazhong Universirty of Science and Technology
-
LU Dexin
Department of Solid State Electronics, Huazhong Universirty of Science and Technology
-
HUANG Longbo
Department of Solid State Electronics, Huazhong Universirty of Science and Technology
-
XUAN Jiangde
Department of Solid State Electronics, Huazhong Universirty of Science and Technology
-
Liu Jianshe
Department Of Solid State Electronics Huazhong Universirty Of Science And Technology
-
Li Xingjiao
Department Of Solid State Electronics Huazhong Universirty Of Science And Technology
-
Xuan Jiangde
Department Of Solid State Electronics Huazhong Universirty Of Science And Technology
-
Huang Longbo
Department Of Solid State Electronics Huazhong Universirty Of Science And Technology
-
Lu Dexin
Department Of Solid State Electronics Huazhong Universirty Of Science And Technology
関連論文
- Characteristics of Pb(Zr_Ti_)O_3 Thin Films on p-Si with a Buffer Layer of Bi_4Ti_3O_ Prepared by Pulsed Laser Deposition
- Computer Simulation of Fatigue in Ferroelectric Thin Films by a Modified Diffusion Limited Aggregation Model with Drift
- Characteristics of Pb(Zr0.52Ti0.48)O3 Thin Films on p-Si with a Buffer Layer of Bi4Ti3O12 Prepared by Pulsed Laser Deposition