Characteristics of Pb(Zr0.52Ti0.48)O3 Thin Films on p-Si with a Buffer Layer of Bi4Ti3O12 Prepared by Pulsed Laser Deposition
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概要
- 論文の詳細を見る
The Pb(Zr0.52Ti0.48)O3 ferroelectric films with a $c$-axis oriented Bi4Ti3O12 buffer layer were deposited on p-Si(100) substrate by pulsed laser deposition (PLD) technique. The Pb(Zr0.52Ti0.48)O3 films were found to grow with a preferred orientation along (110) direction. Good ferroelectric properties were obtained for a 400 nm thick Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12 film system with Au electrodes: $P_{\text{r}}$ and $E_{\text{c}}$ were 20 $\mu$C/cm2 and 48 kV/cm respectively. The memory window of capacitance–voltage ($C$–$V$) charactristics enlarged obviously and the current density reduced nearly two orders of magnitude after introducing the BIT buffer layer. The decay in remnant polarization was only 10% up to at least $10^{9}$ bipolar switching cycles.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-03-15
著者
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Yu Jun
Department Of Electronic Science & Technology Huazhong University Of Science & Technology
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WANG Yunbo
Department of Electronic Science & Technology, Huazhong University of Science & Technology
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ZHOU Wenli
Department of Electronic Science & Technology, Huazhong University of Science & Technology
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Dong Xiaomin
Department Of Electronic Science And Technology Huazhong University Of Science And Technology
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Zhao Jianhong
Department Of Electronic Science And Technology Huazhong University Of Science And Technology
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Zheng Yuankai
Department Of Electronic Science And Technology Huazhong University Of Science And Technology
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Wang Hua
Department Molecular Oral Medicine And Maxillofacial Surgery Division Of Frontier Medical Science Pr
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Yu Jun
Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
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Zhou Wenli
Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
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Dong Xiaomin
Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
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Wang Yunbo
Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
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- Characteristics of Pb(Zr0.52Ti0.48)O3 Thin Films on p-Si with a Buffer Layer of Bi4Ti3O12 Prepared by Pulsed Laser Deposition