Quick and Quantitative Measurement of Oxygen Precipitates near Denuded Zone in Intrinsic-Gettering-Treated Czochralski-Si Wafers

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概要

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• Defect profiles near the denuded zone in intrinsic-gettering (IG)-treated Czochralski (CZ) Si wafers, which had been immersed in Secco etching solution in advance, were measured using a wafer defect analyzer. It is clear that measurement of oxygen precipitates is completed near the denuded zone of 125-mm-diam Si wafers in a few hours, and that in the region of precipitate densities from 5×10^4 to 10^6 (cm^<-2>) that were counted by means of Nomarski microscope, the systematical error of this wafer defect analyzer is smaller than 10%.

• 1992-09-15

著者

• Miyairi Hiroo

  Mitsubishi Materials Silicon Co. Ltd. Evaluation Technology Department

• SUZUKI Isamu

  Mitsubishi Materials Silicon Co., Ltd., Evaluation Technology Department

• HORIOKA Yukichi

  Mitsubishi Materials Silicon Co., Ltd., Evaluation Technology Department

• MIYAIRI Hiroo

  Mitsubishi Materials Silicon Co., Ltd., Evaluation Technology Department

関連論文

• Quick and Quantitative Measurement of Oxygen Precipitates near Denuded Zone in Intrinsic-Gettering-Treated Czochralski-Si Wafers

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