Comparing Effects of Vacuum Annealing and Dry Oxidation on the Photoluminescence of Porous Si

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概要

• 論文の詳細を見る

• Effects of vacuum annealing and dry oxidation on the photoluminescence properties of porous Si are reported. Anodized porous Si is formed by electrochemical etching in an aqueous HF solution of 16 to 48 wt% with a current density of 10 to 70 mA/cm^2. A subsequent vacuum annealing (from 400℃ to 800℃) weakens the intensity of the photoluminescence, whereas, oxidation using dry oxygen at 5 Torr above 800℃ increases the intensity remarkably in addition to providing blue shifts as large as 100 nm. This study suggests that the visible photoluminescence is due to the modified quasi-direct band-gap structure of Si by the quantum confinement of electrons and holes.

• 社団法人応用物理学会の論文
• 1992-08-01

著者

• KONDO Kazuaki

  Advanced Technology Division, Fujitsu Limited

• Kondo Kazuaki

  Advanced Technology Division Fujitsu Limited

• Yamada Masao

  Advanced Technology Division Fujitsu Limited

関連論文

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• Anomalous Etching Residues of Sputter-Deposited Ta upon Reactive Ion Etching Using Chlorine-Based Plasmas
• Comparing Effects of Vacuum Annealing and Dry Oxidation on the Photoluminescence of Porous Si

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