Anomalous Etching Residues of Sputter-Deposited Ta upon Reactive Ion Etching Using Chlorine-Based Plasmas

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概要

• 論文の詳細を見る

• Anomalous etching of Ta which is sputter-deposited on silicon carbide (SiC) films is observed upon reactive ion etching (RIE) using a gas mixture of chlorine and chloroform. We find that α-Ta is hardly etched off by either chlorine-based plasmas or aqueous hydrofluoric acids (HF), while β-Ta is easily etched off by the same methods. The extent of α-Ta depends on the surface treatment of SiC. The difference in chemical reactivity between the α phase and β phase is discussed using photoemission spectroscopy.

• 社団法人応用物理学会の論文
• 1992-11-15

著者

• YAMADA Masao

  Advanced Technology Division, Fujitsu Ltd.

• Yamabe Masaki

  Advanced Technology Division Fujitsu Limited

• NAKAISHI Masafumi

  Advanced Technology Division, Fujitsu Limited

• KONDO Kazuaki

  Advanced Technology Division, Fujitsu Limited

• SUGISHIMA Kenji

  Advanced Technology Division, Fujitsu Limited

• Kondo Kazuaki

  Advanced Technology Division Fujitsu Limited

• Sugishima Kenji

  Advanced Technology Division Fujitsu Limited

• Yamada Masao

  Advanced Technology Division Fujitsu Limited

• Nakaishi Masafumi

  Advanced Technology Division Fujitsu Limited

関連論文

• RuO_2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials
• Anomalous Etching Residues of Sputter-Deposited Ta upon Reactive Ion Etching Using Chlorine-Based Plasmas
• Precise Reactive Ion Etching of Ta Absorber on X-Ray Masks
• Precise Reactive Ion Etching of Ta Absorber on X-Ray Masks : X-Ray Lithography
• Comparing Effects of Vacuum Annealing and Dry Oxidation on the Photoluminescence of Porous Si

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