An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications

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概要

• 論文の詳細を見る

• This letter demonstrates that the emitter crowding effects are much more dramatic for typical Npn HBTs compared to Pnp HBTs. Hence, the design of emitter width in Pnp HBTs is much flexible and this advantage is shown to favor Pnp HBTs for millimeter-wave power applications.

• 社団法人応用物理学会の論文
• 1992-04-15

著者

• Liu William

  Solid State Laboratory Mccullough Bldg. #226 Stanford University:(present Address) Central Research

• DAI Changhong

  Solid State Laboratory, McCullough Bldg. #226, Stanford University

• Dai Changhong

  Solid State Laboratory Mccullough Bldg. #226 Stanford University

関連論文

• An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications
• Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transistors

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