Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• The minimum emitter-base contact spacing necessary to prevent current gain degradation is discussed for Npn heterojunction bipolar transistors designed for high-speed applications. Theoretical calculations are performed for various base doping levels, base thicknessed, and emitter widths. These results indicate that the minimum spacing for different design parameters varies between 400 Å and 1300 Å.

• 社団法人応用物理学会の論文
• 1992-08-15

著者

• Harris J

  Stanford Univ. Ca Usa

• Liu William

  Solid State Laboratory Mccullough Bldg. #226 Stanford University:(present Address) Central Research

• Liu William

  Solid State Laboratory Mccullough Bldg. #226 Stanford University:(present Address) Central Research

• HARRIS Jamas

  Solid State Laboratory, McCullough Bldg. #226, Stanford University

関連論文

• An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications
• Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transistors

スポンサーリンク