Study of Low-Temperature Oxidation in Au/Si and Cu/Si Systems by 7-MeV Alpha Particle Backscattering Analysis

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概要

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• Low-temperature oxidation kinetics in the Au/Si and Cu/Si systems was measured by a 7-MeV alpha backscattering technique. The formation of a Si oxide layer near the surface in the Au/Si system is mainly controlled by intermixing between the Au and Si substrates. The formation of thick SiO_2 in the Cu-Si interface at room temperature is a catalytic process due to the presence of a Cu_3Si compound.

• 社団法人応用物理学会の論文
• 1992-03-01

著者

• Yonezawa H

  Ntt Interdisciplinary Research Laboratory

• Yonezawa Hiroki

  Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yonezawa Hiroki

  Ntt Interdisciplinary Labs

• LI Jian

  NTT Interdisciplinary Research Laboratory

• SHIGEMATSU Toshio

  NTT Interdisciplinary Research Laboratory

• Li Jian

  Ntt Interdisciplinary Research Laboratory:(present Address)department Of Materials Science And Engin

関連論文

• Characterization and Improvements of Metal-p Type ZnSe Interfaces
• Study of Low-Temperature Oxidation in Au/Si and Cu/Si Systems by 7-MeV Alpha Particle Backscattering Analysis
• Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane

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