Emitter Material Comparison between InGaP and InGaAsP in GaAs-Based Heterojunction Bipolar Transistors

概要

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In_<0.49>Ga_<0.51>P (E_g=1.87 eV)/GaAs and In_<0.38>Ga_<0.62>As_<0.22>P_<0.78> (E_g=1.77 eV)/GaAs Npn heterojunction bipolar transistors (HBTs) were fabricated. In devices with 110 μm×110 μm emitter areas, the curtent gains of both devices were the same value of 14 at a collector current density of 700 A/cm^2. By contrast, the turn-on voltage of InGaAsP/GaAs HBTs was 0.01 V smaller than that of InGaP/GaAs HBTs, which indicated that the conduction band discontinuity of the InGaP/InGaAsP heterojunction was much smaller than the valence band discontinuity.
社団法人応用物理学会の論文
1994-07-15