A Model-Based Comparison of the Performance of AlGaAs/GaAs and Si/SiGe Heterojunction Bipolar Transistors (HBTs) Including Thermal Effects

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概要

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• The performances of AlGaAs/GaAs and Si/SiGe heterojunction bipolar transistors (HBTs) at room temperature are compared based on an analytical model which includes relevant physics such as the high-current and thermal (or self-heating) effects. Three figures of merit of the HBTs are calculated and compared: the dc current gain, cutoff frequency, and maximum oscillation frequency. Our results indicate that the AlGaAs/GaAs HBT possesses less uniform but higher peak current gain, cutoff frequency, and maximum oscillation frequency than its Si/SiGe counterpart. Furthermore, at high current densities, it has been shown that the thermal effect becomes important and degrades the performance of AlGaAs/GaAs HBT more significantly than that of Si/SiGe HBT due primarily to the poorer GaAs thermal conductivity than Si.

• 社団法人応用物理学会の論文
• 1994-07-15

著者

• Liou J.

  Electrical And Computer Engineering Department University Of Central Florida

• LIOU J.

  Electrical and Computer Engineering Department, University of Central Florida

関連論文

• A Model-Based Comparison of the Performance of AlGaAs/GaAs and Si/SiGe Heterojunction Bipolar Transistors (HBTs) Including Thermal Effects
• Transient Analysis of Minority Carrier Diffusion in the Base of P/N Junction Diodes and Bipolar Transistors

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