Transient Analysis of Minority Carrier Diffusion in the Base of P/N Junction Diodes and Bipolar Transistors

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概要

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• The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to a step-up or step-down (switch-on or switch-off) applied voltage has been obtained. Analytical expressions are found by solving the time-dependent minority-carrier diffusion equation with appropriate boundary conditions. A general case with arbitrary base width under both switch-on and switch-off transients is considered. In addition, the validity of the constant-voltage and constant-current approaches under different base widths and different bias conditions are also discussed. This analytical approach is also applied to obtain the turn-on current transients of a forward-active bipolar transistor. The results are compared with those simulated from the conventional Gummel-Poon model and obtained from measurement.

• 社団法人応用物理学会の論文
• 1995-10-15

著者

• Liou J.

  Electrical And Computer Engineering Department University Of Central Florida

• HASSELBECK M.

  Electrical and Computer Engineering Department, University of Central Florida

• Hasselbeck M.

  Electrical And Computer Engineering Department University Of Central Florida

関連論文

• A Model-Based Comparison of the Performance of AlGaAs/GaAs and Si/SiGe Heterojunction Bipolar Transistors (HBTs) Including Thermal Effects
• Transient Analysis of Minority Carrier Diffusion in the Base of P/N Junction Diodes and Bipolar Transistors

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