Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N_2O Annealing

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概要

• 論文の詳細を見る

• Repeated rapid thermal N_2O annealing is proposed as a new gate oxide preparation method for n-channel metaloxide-semiconductor field-effect transistors (n-MOSFET's). It is found that the n-MOSFET's with gate oxide prepared by this method exhibit higher field-effect mobility and better radiation hardness when compared with those with fresh and the conventional one-time N_2O-annealed gate oxides.

• 社団法人応用物理学会の論文
• 1994-07-01

著者

• Hwu Jenn-gwo

  Rm 446 Department Of Electrical Engineering National Taiwan University

• Wu You-lin

  Rm 446 Department Of Electrical Engineering National Taiwan University

• KUO Kang-Min

  Rm 446, Department of Electrical Engineering, National Taiwan University

• Kuo Kang-min

  Rm 446 Department Of Electrical Engineering National Taiwan University

関連論文

• Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N_2O Annealing

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